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Nexperia USA Inc.
Product No:
GAN190-650EBEZ
Manufacturer:
Package:
DFN8080-8
Batch:
-
Description:
650 V, 190 MOHM GALLIUM NITRIDE
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.522
$4.522
10
$3.79525
$37.9525
100
$3.0704
$307.04
500
$2.729274
$1364.637
1000
$2.336943
$2336.943
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Mfr | Nexperia USA Inc. |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | +7V, -1.4V |
Technology | GaNFET (Gallium Nitride) |
FET Feature | - |
Mounting Type | Surface Mount, Wettable Flank |
Package / Case | 8-VDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 12.2mA |
Base Product Number | GAN190 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 190mOhm @ 3.9A, 6V |
Power Dissipation (Max) | 125W (Ta) |
Supplier Device Package | DFN8080-8 |
Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 6 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 400 V |
Drive Voltage (Max Rds On, Min Rds On) | 6V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |