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GAN190-650EBEZ

Nexperia USA Inc.

Product No:

GAN190-650EBEZ

Manufacturer:

Nexperia USA Inc.

Package:

DFN8080-8

Batch:

-

Datasheet:

Description:

650 V, 190 MOHM GALLIUM NITRIDE

Quantity:

Delivery:

Payment:

In Stock : 2401

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.522

    $4.522

  • 10

    $3.79525

    $37.9525

  • 100

    $3.0704

    $307.04

  • 500

    $2.729274

    $1364.637

  • 1000

    $2.336943

    $2336.943

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GAN190-650EBEZ - Product Information

Parameter Info

User Guide

Mfr Nexperia USA Inc.
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +7V, -1.4V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-VDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 12.2mA
Base Product Number GAN190
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 3.9A, 6V
Power Dissipation (Max) 125W (Ta)
Supplier Device Package DFN8080-8
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 6 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 96 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 6V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)