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G33N03D52

Goford Semiconductor

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G33N03D52

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Package:

DFN5*6

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Description:

N30V, 33A,RD<13M@10V,VTH1V~3V, D

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Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Mounting Type	Surface Mount
Package / Case	DFN5*6
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	13mOhm @ 16A, 10V
Power Dissipation (Max)	29W (Tc)
Supplier Device Package	DFN5*6
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	782 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)