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FQU2N60CTU

Fairchild Semiconductor

Product No:

FQU2N60CTU

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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FQU2N60CTU - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series QFET®
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Supplier Device Package I-PAK
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)