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FQU1N80TU

Fairchild Semiconductor

Product No:

FQU1N80TU

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 1A I-PAK

Quantity:

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FQU1N80TU - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series QFET®
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Supplier Device Package I-PAK
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)