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FQPF33N10L
Fairchild Semiconductor
Product No:
FQPF33N10L
Manufacturer:
Package:
TO-220F-3
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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FQPF33N10L - Product Information
Parameter Info
User Guide
| Mfr | Fairchild Semiconductor |
| Series | QFET® |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 9A, 10V |
| Power Dissipation (Max) | 41W (Tc) |
| Supplier Device Package | TO-220F-3 |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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