Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FQP7N80C

Fairchild Semiconductor

Product No:

FQP7N80C

Manufacturer:

Package:

TO-220-3

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 6

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.9Ohm @ 3.3A, 10V
Power Dissipation (Max)	167W (Tc)
Supplier Device Package	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Drain to Source Voltage (Vdss)	800 V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)