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FQD4N20TM

onsemi

Product No:

FQD4N20TM

Manufacturer:

onsemi

Package:

TO-252AA

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 3

Quantity:

Delivery:

Payment:

In Stock : 7500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1086

    $0.266

    $288.876

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FQD4N20TM - Product Information

Parameter Info

User Guide

Mfr onsemi
Series QFET®
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.5A, 10V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Supplier Device Package TO-252AA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)