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FQD19N10LTM

Fairchild Semiconductor

Product No:

FQD19N10LTM

Package:

TO-252, (D-Pak)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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FQD19N10LTM - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series QFET®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 100mOhm @ 7.8A, 10V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Supplier Device Package TO-252, (D-Pak)
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Current - Continuous Drain (Id) @ 25°C 15.6A (Tc)