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FQD13N10TM

Fairchild Semiconductor

Product No:

FQD13N10TM

Package:

TO-252AA

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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FQD13N10TM - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series QFET®
Package Bulk
FET Type N-Channel
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 10V
Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Supplier Device Package TO-252AA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)