Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FQB55N10TM

Fairchild Semiconductor

Product No:

FQB55N10TM

Manufacturer:

Package:

D2PAK (TO-263)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 5

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±25V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	26mOhm @ 27.5A, 10V
Power Dissipation (Max)	3.75W (Ta), 155W (Tc)
Supplier Device Package	D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2730 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	55A (Tc)