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FQB4N80TM
Fairchild Semiconductor
Product No:
FQB4N80TM
Manufacturer:
Package:
D2PAK (TO-263)
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 3
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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FQB4N80TM - Product Information
Parameter Info
User Guide
| Mfr | Fairchild Semiconductor |
| Series | QFET® |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.95A, 10V |
| Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
| Supplier Device Package | D2PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
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