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FQB11P06TM

Fairchild Semiconductor

Product No:

FQB11P06TM

Package:

D2PAK (TO-263)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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FQB11P06TM - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series QFET®
Package Bulk
FET Type P-Channel
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 175mOhm @ 5.7A, 10V
Power Dissipation (Max) 3.13W (Ta), 53W (Tc)
Supplier Device Package D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)