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FGL35N120FTDTU

Fairchild Semiconductor

Product No:

FGL35N120FTDTU

Package:

HPM F2

Batch:

-

Datasheet:

-

Description:

INSULATED GATE BIPOLAR TRANSISTO

Quantity:

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In Stock : 15610

Minimum: 1 Multiples: 1

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  • 50

    $5.757

    $287.85

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FGL35N120FTDTU - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series -
Package Bulk
IGBT Type Trench Field Stop
Input Type Standard
Gate Charge 210 nC
Power - Max 368 W
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Product Status Active
Test Condition 600V, 35A, 10Ohm, 15V
Switching Energy 2.5mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C 34ns/172ns
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package HPM F2
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 35A
Reverse Recovery Time (trr) 337 ns
Current - Collector (Ic) (Max) 70 A
Current - Collector Pulsed (Icm) 105 A
Voltage - Collector Emitter Breakdown (Max) 1200 V