Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FF6MR12W2M1HPB11BPSA1

Infineon Technologies

Product No:

Manufacturer:

Package:

Module

Batch:

Datasheet:

Description:

LOW POWER EASY

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Series	HEXFET®
Package	Tray
Technology	Silicon Carbide (SiC)
FET Feature	Silicon Carbide (SiC)
Power - Max	-
Configuration	2 N-Channel
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	5.55V @ 80mA
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	5.63mOhm @ 200A, 15V
Supplier Device Package	Module
Gate Charge (Qg) (Max) @ Vgs	496nC @ 15V
Drain to Source Voltage (Vdss)	1200V
Input Capacitance (Ciss) (Max) @ Vds	14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C	200A (Tj)