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FF23MR12W1M1B11BOMA1

Infineon Technologies

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Module

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MOSFET 2 N-CH 1200V 50A MODULE

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Mfr	Infineon Technologies
Series	CoolSiC™+
Package	Tray
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	-
Configuration	2 N-Channel (Dual)
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.55V @ 20mA
Base Product Number	FF23MR12
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	23mOhm @ 50A, 15V
Supplier Device Package	Module
Gate Charge (Qg) (Max) @ Vgs	125nC @ 15V
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	3950pF @ 800V
Current - Continuous Drain (Id) @ 25°C	50A