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FDP120N10

Fairchild Semiconductor

Product No:

FDP120N10

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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FDP120N10 - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series PowerTrench®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 12mOhm @ 74A, 10V
Power Dissipation (Max) 170W (Tc)
Supplier Device Package TO-220-3
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 5605 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 74A (Tc)