Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FDFME2P823ZT

Fairchild Semiconductor

Product No:

FDFME2P823ZT

Package:

6-MicroFET (1.6x1.6)

Batch:

-

Datasheet:

-

Description:

2.6A, 20V, P-CHANNEL MOSFET

Quantity:

Delivery:

Payment:

In Stock : 40000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1025

    $0.2755

    $282.3875

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

FDFME2P823ZT - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series PowerTrench®
Package Bulk
FET Type P-Channel
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature Schottky Diode (Isolated)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Base Product Number FDFME2
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 142mOhm @ 2.3A, 4.5V
Power Dissipation (Max) 1.4W (Ta)
Supplier Device Package 6-MicroFET (1.6x1.6)
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)