Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FDD7N25LZTM

onsemi

Product No:

FDD7N25LZTM

Manufacturer:

Package:

TO-252AA

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 6

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	onsemi
Series	UniFET™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	550mOhm @ 3.1A, 10V
Power Dissipation (Max)	56W (Tc)
Supplier Device Package	TO-252AA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Drain to Source Voltage (Vdss)	250 V
Input Capacitance (Ciss) (Max) @ Vds	635 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	6.2A (Tc)