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FDD6N25TM

Fairchild Semiconductor

Product No:

FDD6N25TM

Package:

TO-252AA

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 4

Quantity:

Delivery:

Payment:

In Stock : 1087749

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 1086

    $0.266

    $288.876

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FDD6N25TM - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series UniFET™
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2.2A, 10V
Power Dissipation (Max) 50W (Tc)
Supplier Device Package TO-252AA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Drain to Source Voltage (Vdss) 250 V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)