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FDD6612A

Fairchild Semiconductor

Product No:

FDD6612A

Package:

TO-252, (D-Pak)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 9

Quantity:

Delivery:

Payment:

In Stock : 262679

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 598

    $0.475

    $284.05

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FDD6612A - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series PowerTrench®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 20mOhm @ 9.5A, 10V
Power Dissipation (Max) 2.8W (Ta), 36W (Tc)
Supplier Device Package TO-252, (D-Pak)
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 5 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 30A (Tc)