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FDC5661N

Fairchild Semiconductor

Product No:

FDC5661N

Package:

TSOT-23-6

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR

Quantity:

Delivery:

Payment:

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FDC5661N - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series PowerTrench®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 47mOhm @ 4.3A, 10V
Power Dissipation (Max) 1.6W (Ta)
Supplier Device Package TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 763 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)