Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FDB12N50TM

Fairchild Semiconductor

Product No:

FDB12N50TM

Package:

D2PAK (TO-263)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

FDB12N50TM - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series UniFET™
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Power Dissipation (Max) 165W (Tc)
Supplier Device Package D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Input Capacitance (Ciss) (Max) @ Vds 1315 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)