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FDB0260N1007L

Fairchild Semiconductor

Product No:

FDB0260N1007L

Package:

TO-263-7

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 200A TO263-7

Quantity:

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FDB0260N1007L - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series PowerTrench®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.6mOhm @ 27A, 10V
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Supplier Device Package TO-263-7
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 8545 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)