Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FCD9N60NTM

Fairchild Semiconductor

Product No:

FCD9N60NTM

Package:

TO-252, (D-Pak)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 9

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

FCD9N60NTM - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series SupreMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 385mOhm @ 4.5A, 10V
Power Dissipation (Max) 92.6W (Tc)
Supplier Device Package TO-252, (D-Pak)
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)