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F1T3G A0G

Taiwan Semiconductor Corporation

Product No:

F1T3G A0G

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Package:

TS-1

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Description:

DIODE GEN PURP 200V 1A TS-1

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Mfr	Taiwan Semiconductor Corporation
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Tape & Box (TB)
Technology	Standard
Mounting Type	Through Hole
Package / Case	T-18, Axial
Product Status	Active
Base Product Number	F1T3
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Supplier Device Package	TS-1
Reverse Recovery Time (trr)	150 ns
Current - Reverse Leakage @ Vr	5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)	200 V
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 1 A