Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EPC
Product No:
EPC2101
Manufacturer:
Package:
Die
Batch:
-
Description:
GAN TRANS ASYMMETRICAL HALF BRID
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$8.4075
$8.4075
10
$7.2029
$72.029
100
$6.00267
$600.267
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Mfr | EPC |
Series | eGaN® |
Package | Tape & Reel (TR) |
Technology | GaNFET (Gallium Nitride) |
FET Feature | - |
Power - Max | - |
Configuration | 2 N-Channel (Half Bridge) |
Mounting Type | Surface Mount |
Package / Case | Die |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 3mA, 2.5V @ 12mA |
Base Product Number | EPC210 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V |
Supplier Device Package | Die |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V, 12nC @ 5V |
Drain to Source Voltage (Vdss) | 60V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V, 1200pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |