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EGF1THE3_A/I

Vishay General Semiconductor - Diodes Division

Product No:

EGF1THE3_A/I

Package:

DO-214BA (GF1)

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 1.3KV 1A DO214BA

Quantity:

Delivery:

Payment:

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EGF1THE3_A/I - Product Information

Parameter Info

User Guide

Mfr Vishay General Semiconductor - Diodes Division
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series Automotive, AEC-Q101, Superectifier®
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case DO-214BA
Product Status Active
Capacitance @ Vr, F 8pF @ 4V, 1MHz
Supplier Device Package DO-214BA (GF1)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1300 V
Voltage - DC Reverse (Vr) (Max) 1300 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 3 V @ 1 A