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CMG06(TE12L,Q,M)

Toshiba Semiconductor and Storage

Product No:

CMG06(TE12L,Q,M)

Package:

M-FLAT (2.4x3.8)

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 600V 1A M-FLAT

Quantity:

Delivery:

Payment:

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CMG06(TE12L,Q,M) - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Speed Standard Recovery >500ns, > 200mA (Io)
Series -
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case SOD-128
Product Status Obsolete
Base Product Number CMG06
Capacitance @ Vr, F -
Supplier Device Package M-FLAT (2.4x3.8)
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -40°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A