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BYV30JT-600PQ

WeEn Semiconductors

Product No:

BYV30JT-600PQ

Manufacturer:

Package:

TO-3P

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Datasheet:

Description:

DIODE GEN PURP 600V 30A TO3P

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In Stock : 3840

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Mfr	WeEn Semiconductors
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Tube
Technology	Standard
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Base Product Number	BYV30
Capacitance @ Vr, F	-
Supplier Device Package	TO-3P
Reverse Recovery Time (trr)	65 ns
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	30A
Operating Temperature - Junction	175°C (Max)
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 30 A