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BYR29X-600,127

NXP Semiconductors

Product No:

BYR29X-600,127

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Package:

TO-220F

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Description:

DIODE GEN PURP 600V 8A TO220F

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In Stock : 5015

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Mfr	NXP Semiconductors
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Bulk
Technology	Standard
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Product Status	Active
Capacitance @ Vr, F	-
Supplier Device Package	TO-220F
Reverse Recovery Time (trr)	75 ns
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	8A
Operating Temperature - Junction	150°C (Max)
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A