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BUK9E1R6-30E,127

NXP USA Inc.

Product No:

BUK9E1R6-30E,127

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Package:

I2PAK

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Description:

MOSFET N-CH 30V 120A I2PAK

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Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.1V @ 1mA
Base Product Number	BUK9
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	1.4mOhm @ 25A, 10V
Power Dissipation (Max)	349W (Tc)
Supplier Device Package	I2PAK
Gate Charge (Qg) (Max) @ Vgs	113 nC @ 5 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	16150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)