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BUK662R5-30C,118-NXP

NXP USA Inc.

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D2PAK

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PFET, 100A I(D), 30V, 0.0048OHM,

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Mfr	NXP USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±16V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.8mOhm @ 25A, 10V
Power Dissipation (Max)	204W (Tc)
Supplier Device Package	D2PAK
Gate Charge (Qg) (Max) @ Vgs	114 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	6960 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)