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BSM120D12P2C005

Rohm Semiconductor

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BSM120D12P2C005

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Module

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Description:

MOSFET 2N-CH 1200V 120A MODULE

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Mfr	Rohm Semiconductor
Series	-
Package	Bulk
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	780W
Configuration	2 N-Channel (Half Bridge)
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	2.7V @ 22mA
Base Product Number	BSM120
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	Module
Gate Charge (Qg) (Max) @ Vgs	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)