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APT25SM120S

Microsemi Corporation

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APT25SM120S

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SICFET N-CH 1200V 25A D3

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Mfr	Microsemi Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Chassis Mount
Package / Case	D-3 Module
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	175mOhm @ 10A, 20V
Power Dissipation (Max)	175W (Tc)
Supplier Device Package	D3
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)