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6A100GHB0G

Taiwan Semiconductor Corporation

Product No:

6A100GHB0G

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Package:

R-6

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Description:

DIODE GEN PURP 1KV 6A R-6

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Mfr	Taiwan Semiconductor Corporation
Speed	Standard Recovery >500ns, > 200mA (Io)
Series	Automotive, AEC-Q101
Package	Bulk
Technology	Standard
Mounting Type	Through Hole
Package / Case	R-6, Axial
Product Status	Active
Base Product Number	6A100
Capacitance @ Vr, F	60pF @ 4V, 1MHz
Supplier Device Package	R-6
Current - Reverse Leakage @ Vr	10 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)	1000 V
Current - Average Rectified (Io)	6A
Operating Temperature - Junction	-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If	1 V @ 6 A