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2SK3309(Q)

Toshiba Semiconductor and Storage

Product No:

2SK3309(Q)

Package:

TO-220FL

Batch:

-

Datasheet:

Description:

MOSFET N-CH 450V 10A TO220FL

Quantity:

Delivery:

Payment:

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2SK3309(Q) - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 1mA
Base Product Number 2SK3309
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 650mOhm @ 5A, 10V
Power Dissipation (Max) 65W (Tc)
Supplier Device Package TO-220FL
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 450 V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)