Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SB1481(TOJS,Q,M)

Toshiba Semiconductor and Storage

Product No:

2SB1481(TOJS,Q,M)

Manufacturer:

Package:

TO-220NIS

Batch:

Datasheet:

Description:

TRANS PNP 100V 4A TO220NIS

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Bulk
Power - Max	2 W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Obsolete
Transistor Type	PNP
Base Product Number	2SB1481
Operating Temperature	150°C (TJ)
Frequency - Transition	-
Supplier Device Package	TO-220NIS
Vce Saturation (Max) @ Ib, Ic	1.5V @ 6mA, 3A
Current - Collector (Ic) (Max)	4 A
Current - Collector Cutoff (Max)	2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V
Voltage - Collector Emitter Breakdown (Max)	100 V